"Reconfigurable Advanced Memory Device (RAMD)" Group is at the Department of Electrical Engineering, IIT Patna, Bihar, India. RAMD Group is dedicated to designing and developing 2/3 2/3-terminal-based high-density Memristive/Resistive memory crossbar array devices for energy/power-efficient high-performance analog and neuromorphic computing paradigms, and their use in the 'Building of the Silicon Brain', Synaptic Devices, Low power digital logic operations, and many more. To achieve this goal, we synthesize and develop emerging 2D materials (MoS2, MoSe2, WS2, and others) and transition metal oxide materials (Y2O3, HfO2, TiO2, and HfZrO) that play a pivotal role as a resistive switching medium in these devices. Additionally, the RAMD Group is committed to providing novel micro/nanofabrication solutions for advanced Micro-Electro-Mechanical System (MEMS)-based resistive/capacitive sensors for gas sensing and biochemical sensing applications with integrated lightweight portable energy storage/generation devices, including batteries, supercapacitors, and Triboelectric nanogenerators for flexible, transparent, and cost-effective electronics devices and systems.

"Man needs his difficulties because they are necessary to enjoy success." - Dr. Kalam

"Science knows no country, because knowledge belongs to humanity, and is the torch which illuminates the world." -L. Pasteur